| Attribute | Value |
|---|---|
| Type of channel | N |
| Continuous maximum drain current | 80 A |
| Maximum drain source voltage | 75 V |
| Maximum drain source resistance | 11 mΩ |
| Maximum gate threshold voltage | 4V |
| Minimum gate threshold voltage | 2V |
| Maximum gate source voltage | -20 V, +20 V |
| Package type | TO-220 |
| Type of assembly | On hole |
| Pin number | 3 |
| Transistor configuration | Single |
| Channel mode | Enhancement |
| Category | Power MOSFET |
| Maximum power dissipation | 300 W |
| Typical switch-off delay | 66 ns |
| Typical input capacity @ Vds | 3700 pF at 25 V |
| Typical gate charge @ Vgs | 117 nC to 10 V |
| Minimum operating temperature | -55 ° C |
| Typical ignition delay | 25 ns |
| Transistor material | Yes |
| Number of items per chip | 1 |
| dimensions | 10.4 x 4.6 x 9.15mm |
| Length | 10.4mm |
| Maximum operating temperature | +175 ° C |
| Series | STripFET II |
| Height | 9.15mm |
| Width | 4.6mm |
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