Características:
Transistor Darlington NPN de propósito general
IC max: 5 A
IC pico max: 8 A
IB max: 0.12 A
PTOT: 65 W
VCEO: 100 V, VCBO: 100 V, VEBO: 5 V
hFE min: 1000 (@ IC=3 A, VCE=3 V)
Diodo damper entre colector y emisor
Bajo voltaje de saturación colector-emisor
Complementario: TIP127
Encapsulado: TO-220
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