- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.6 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 0.03 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 80 MHz
- Collector Capacitance (Cc): 6 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
- Noise Figure, dB: –
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