Description
Characteristics of the bipolar transistor 2SA684:
- Type – p-n-p
- Collector-Emitter Voltage: -50 V
- Collector-Base Voltage: -60 V
- Emitter-Base Voltage: -5 V
- Collector Current: -1 A
- Collector Dissipation – 1 W
- DC Current Gain (hfe) – 85 to 340
- Transition Frequency – 200 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
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